Maiti, K. ; Sarma, D. D. (1998) Electronic structure of Y2−xCaxBaNiO5 from photoemission and inverse photoemission Physical Review B: Condensed Matter and Materials Physics, 58 (15). pp. 9746-9751. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v58/i15/p9746_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.58.9746
Abstract
We investigate the electronic structure of a one-dimensional spin-1 system, Y2BaNiO5, and hole-doped Y2−xCaxBaNiO5 for x=0.2 and 0.4, employing photoemission and inverse photoemission spectroscopies. Y2BaNiO5 has a charge excitation gap of about 2.3 eV. Hole doping via Ca substitution in this system introduces new localized states within this gap. The existence of a finite gap (~0.6 eV), even in doped compounds with a variable-range-hopping transport, indicates the importance of correlation effects and disorder in determining the electronic structure in this system.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 46335 |
| Deposited On: | 04 Jul 2011 06:51 |
| Last Modified: | 19 Jun 2012 14:28 |
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