Maiti, K. ; Sarma, D. D. (2000) Spectroscopic investigations of the electronic structure and metal-insulator transitions in a Mott-Hubbard system La1−xCaxVO3 Physical Review B: Condensed Matter and Materials Physics, 61 (4). pp. 2525-2534. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v61/i4/p2525_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.61.2525
Abstract
We investigate the electronic structure of La1−xCaxVO3 for various values of x. LaVO3 is a Mott-Hubbard insulator with band gap of about 1.0±0.2eV. Hole doping in this system leads to the growth of a new feature at the Fermi level for x > ~ 0.2, suggesting an insulator-to-metal transition. In addition, the metallic compositions show a metal-insulator transition between the bulk and the surface. We separate the surface and bulk electronic structures from the experimental spectra. The evolution of the bulk electronic structure as a function of doping is characterized by a spectral weight transfer from the incoherent to the coherent feature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 46291 |
| Deposited On: | 04 Jul 2011 06:54 |
| Last Modified: | 17 Jul 2012 16:11 |
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