Electron spectroscopic investigation of the semiconductor-metal transition in La1−xSrxMnO3

Chainani, A. ; Mathew, M. ; Sarma, D. D. (1993) Electron spectroscopic investigation of the semiconductor-metal transition in La1−xSrxMnO3 Physical Review B: Condensed Matter and Materials Physics, 47 (23). pp. 15397-15403. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v47/i23/p15397_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.47.15397

Abstract

We study the electronic structure of La1−xSrxMnO3+δ , x=0, 0.1, 0.2, 0.3, and 0.4, across the semiconductor-metal transition, using various electron spectroscopy techniques. The negligible intensity seen at EF using ultraviolet photoemission spectroscopy and bremsstrahlung isochromat spectroscopy (BIS) indicate an unusual semiconductor-metal transition observed for x≥0.2, consistent with the resistivity data. The BIS spectra show doped hole states developing about 1.4 eV above EF as a function of x. Auger electron spectroscopy gives an estimate of the intra-atomic Coulomb energy in the O 2p manifold to be about 6.8 eV. The Mn 2p core-level spectrum of LaMnO3, analyzed in terms of a configuration-interaction calculation, gives parameter values of the charge-transfer energy Δ=5.0 eV, the hybridization strength between Mn 3d and O 2p states, t=3.8 eV, and the on-site Coulomb energy in Mn 3d states Udd=4.0 eV, suggesting a mixed character for the ground state of LaMnO3.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:46219
Deposited On:02 Jul 2011 13:53
Last Modified:02 Jul 2011 13:53

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