Kaindl, G. ; Schmiester, G. ; Sampathkumaran, E. V. ; Wachter , P. (1988) Pressure-induced changes in LIII X-ray-absorption near-edge structure of CeO2 and CeF4: relevance to 4f-electronic structure Physical Review B: Condensed Matter and Materials Physics, 38 (14). pp. 10174-10177. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v38/i14/p10174_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.38.10174
Abstract
X-ray-absorption near-edge structure (XANES) studies were performed at the LIII thresholds of CeO2 and CeF4 as a function of external pressure up to ≅267 kbar at room temperature. In both cases, the 4f0-related higher-energy component of the essentially double-peaked XANES structure decreases in relative intensity with pressure, opposite to what is generally observed for metallic mixed-valent Ce compounds. This supports the proposed peak assignment on the basis of core-hole induced many-body effects due to 4f-ligand covalency compatible with traditional tetravalency of these compounds.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 45691 |
| Deposited On: | 29 Jun 2011 03:17 |
| Last Modified: | 29 Jun 2011 03:17 |
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