Rajagopal, R. ; Kale, S. N. ; Raorane, N. A. ; Pinto, R. ; Rao, V. R. (2011) Fabrication of La0.7Sr0.3MnO3-Si heterojunctions using a CMOS-compatible citric acid etch process IEEE Electron Device Letters, 32 (3). pp. 402-404. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/LED.2010.2102331
Abstract
We report La0.7Sr0.3MnO3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicon-technology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44496 |
| Deposited On: | 22 Jun 2011 05:34 |
| Last Modified: | 22 Jun 2011 05:34 |
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