Narasimhulu, K. ; setty, I. V. ; Rao, V. R. (2006) The effect of single-halo doping on the low-erequency noise performance of deep submicrometer MOSFETs IEEE Electron Device Letters, 27 (12). pp. 995-997. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/LED.2006.886409
Abstract
In this letter, the low-frequency noise performance of single-halo (SH) devices is reported, and the physical mechanisms are identified. Experimental results show that, at constant gate overdrive voltages, SH devices show reduced low-frequency noise levels compared to the conventional devices. However, under constant current bias conditions, the noise reduction is less substantial. Low-frequency noise dependence on channel length is also investigated for SH devices based on the electrical measurements and analytical calculations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44466 |
| Deposited On: | 22 Jun 2011 05:27 |
| Last Modified: | 22 Jun 2011 05:27 |
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