Najeev-ud-din, ; Dunga, M. V. ; Kumar, A. ; Vasi, J. ; Ramgopal Rao, V. ; Cheng, Baohong ; Woo, J. C. S. (2002) Änalysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique IEEE Electron Device Letters, 23 (4). pp. 209-211. ISSN 0741-3106
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/55.992841
Abstract
Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 44451 |
| Deposited On: | 22 Jun 2011 03:53 |
| Last Modified: | 22 Jun 2011 03:53 |
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