Anil, Kottantharayil ; Mahapatra, Souvik ; Rao, Valipe Ramgopal ; Eisele, Ignaz (2001) Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs Japanese Journal of Applied Physics, 40 . pp. 2621-2626. ISSN 0021-4922
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Official URL: http://jjap.jsap.jp/link?JJAP/40/2621/
Related URL: http://dx.doi.org/10.1143/JJAP.40.2621
Abstract
Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Pure and Applied Physics. |
| Keywords: | MOSFET; Impact Ionization; Hot-carriers; Sub-bandgap; Quantization |
| ID Code: | 44446 |
| Deposited On: | 22 Jun 2011 03:49 |
| Last Modified: | 22 Jun 2011 03:49 |
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