Gautam, Ujjal K. ; Vivekchand, S. R. C. ; Govindaraj, A. ; Rao, C. N. R. (2005) GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls Chemical Communications (31). pp. 3995-3997. ISSN 1359-7345
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Official URL: http://pubs.rsc.org/en/content/articlelanding/2005...
Related URL: http://dx.doi.org/10.1039/B506676J
Abstract
Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900°C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800°C, while maintaining dimensional integrity.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to Royal Society of Chemistry. |
| ID Code: | 43726 |
| Deposited On: | 15 Jun 2011 06:16 |
| Last Modified: | 18 May 2016 00:37 |
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