Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

Gundiah, Gautam ; Madhav, G. V. ; Govindaraj, A. ; Motin Seikh, Md. ; Rao, C. N. R. (2002) Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires Journal of Materials Chemistry, 12 (5). pp. 1606-1611. ISSN 0959-9428

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Official URL: http://pubs.rsc.org/en/content/articlelanding/2002...

Related URL: http://dx.doi.org/10.1039/B200161F

Abstract

Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain β-SiC nanowires involves heating silica gel with activated carbon at 1360°C in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200°C gives α-Si3N4 nanowires and Si2N2O nanowires at 1100°C. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360°C in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields α-Si3N4 nanowires in pure form.

Item Type:Article
Source:Copyright of this article belongs to Royal Society of Chemistry.
ID Code:43721
Deposited On:15 Jun 2011 06:00
Last Modified:18 May 2016 00:37

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