Kulkarni, G. U. ; Vijayakrishnan, V. ; Ranga Rao, G. ; Seshadri, Ram ; Rao, C. N. R. (1990) State of bismuth in BaBiO3 and BaBi1−xPbxO3: Bi 4f photoemission and Bi L3 absorption spectroscopic studies Applied Physics Letters, 57 (17). pp. 1823-1824. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v57/i17/p1823...
Related URL: http://dx.doi.org/10.1063/1.104145
Abstract
The 2p 6d feature in the Bi L3 spectra has different energies in the semiconducting (0.0≤x<0.7) and the superconducting (x=0.75) compositions of BaBi1−xPbxO3. The Bi 4f core level spectrum shows distinct features ascribable to Bi III and Bi V in BaBiO3 and in the semiconducting compositions; the width of the 4f peaks is also considerably larger in these compositions compared to that in BaBi0.25Pb0.75O3, which shows a single sharp Bi 4f feature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Impurity States; Impurity Spectra; Bismuth; Photoemission; Absorption Spectroscopy; Barium Oxides; Bismuth Oxides; Lead Oxides; Superconductivity; Absorption Spectra; Chemical Composition; Semiconductor Materials |
| ID Code: | 43451 |
| Deposited On: | 11 Jun 2011 13:11 |
| Last Modified: | 11 Jun 2011 13:11 |
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