Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures

Biswas, Kanishka ; Sardar, Kripasindhu ; Rao, C. N. R. (2006) Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures Applied Physics Letters, 89 (13). 132503_1-132503_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v89/i13/p1325...

Related URL: http://dx.doi.org/10.1063/1.2357927

Abstract

3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350°C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (TC) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Ferromagnetic Materials; Gallium Compounds; III-V Semiconductors; Wide Band Gap Semiconductors; Nanostructured Materials; Magnetisation; Curie Temperature; Particle Size; Manganese Compounds; Magnetic Semiconductors
ID Code:43443
Deposited On:11 Jun 2011 13:01
Last Modified:11 Jun 2011 13:01

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