Palnitkar, U. A. ; Kashid, Ranjit V. ; More, Mahendra A. ; Joag, Dilip S. ; Panchakarla, L. S. ; Rao, C. N. R. (2010) Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene Applied Physics Letters, 97 (6). 063102_1-063102_3. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v97/i6/p06310...
Related URL: http://dx.doi.org/10.1063/1.3464168
Abstract
Field emission studies have been carried out on undoped as well as N- and B-doped graphene samples prepared by arc-discharge method in a hydrogen atmosphere. These graphene samples exhibit very low turn-on fields. N-doped graphene shows the lowest turn-on field of 0.6 V/μm, corresponding to emission current density of 10 μA/cm2. These characteristics are superior to the other types of nanomaterials reported in the literature. Furthermore, emission currents are stable over the period of more than 3 h for the graphene samples. The observed emission behavior has been explained on the basis of nanometric features of graphene and resonance tunneling phenomenon.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Boron; Doping; Field Emission; Graphene; Nanostructured Materials; Nitrogen; Resonant Tunnelling |
| ID Code: | 43438 |
| Deposited On: | 11 Jun 2011 12:54 |
| Last Modified: | 11 Jun 2011 12:54 |
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