Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

Paranjape, Mandar A. ; Mane, Anil U. ; Raychaudhuri, A. K. ; Shalini, K. ; Shivashankar, S. A. ; Chakravarty, B. R. (2002) Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure Thin Solid Films, 413 (1-2). pp. 8-15. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...

Related URL: http://dx.doi.org/10.1016/S0040-6090(02)00446-7

Abstract

We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a β-diketonate complex of cobalt, namely cobalt (II) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity. Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Cobalt; Thin Films; Metal-organic Chemical Vapour Deposition (MOCVD); Secondary Ion Mass Spectrometry (SIMS)
ID Code:42719
Deposited On:06 Jun 2011 08:05
Last Modified:06 Jun 2011 08:05

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