Mondal, Shahnewaz ; Raychaudhuri, A. K. (2011) Observation of a large gate-controlled persistent photoconduction in single crystal ZnO at room temperature Applied Physics Letters, 98 (2). 023501_1-023501_3. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v98/i2/p02350...
Related URL: http://dx.doi.org/10.1063/1.3534790
Abstract
Gate-controlled enhanced photoconductivity at room temperature is reported in single crystal ZnO using moderate bias and band gap illumination. A substantial part of the enhanced photocurrent is retained over a long time as a persistent photocurrent when the illumination is removed but the gate voltage (applied with a polymer-electrolyte gate) is retained. The current on the removal of illumination shows a stretched exponential decay with time constants more than few hundreds of seconds. An explanation based on change in charge state of oxygen vacancy has been proposed.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | II-VI Semiconductors; Insulated Gate Field Effect Transistors; Photoconductivity; Photoemission; Polymer Electrolytes; Vacancies (Crystal); Zinc Compounds |
ID Code: | 42648 |
Deposited On: | 04 Jun 2011 13:34 |
Last Modified: | 04 Jun 2011 13:34 |
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