Rao, C. N. R. ; Rama Rao, G. (1977) Semiconductor-metal transition in v-doped Ti3O5 Physics Letters A, 61 (4). pp. 247-248. ISSN 0375-9601
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037596...
Related URL: http://dx.doi.org/10.1016/0375-9601(77)90151-7
Abstract
The semiconductor-metal transition in Ti3O5 is significantly affected by vanadium doping. The unit cell volume, ΔH, Δρ as well as ΔχM decrease markedly up to 0.1% V3O5 and gradually thereafter until at ~10% V3O5, the transition disappears.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 42392 |
| Deposited On: | 02 Jun 2011 12:58 |
| Last Modified: | 02 Jun 2011 12:58 |
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