Imperfections in copper-silicon filings

Abstract

Detailed X-ray line-broadening studies are made on deformed filings of Cu₉₆Si₄, Cu₉₂Si₈, Cu₉₀Si₁₀, and Cu₈₉Si₁₁ alloys. The f.c.c. deformation fault parameters in fresh filings of the first three alloys, in each case of two different grain sizes, are determined by the Paterson method. Stacking-fault contributions to the observed diffraction broadening are eliminated by a procedure suggested by Christian and Spreadborough, and the domain size and lattice strain effects are separated by single line Fourier analysis. The fresh filings of the two-phase Cu₈₉Si₁₁ alloy show only the faulted h.c.p. structure, the f.c.c. phase having disappeared during deformation by filing. The fault parameter, domain size, and lattice strain values in the strain-induced h.c.p. phase are also estimated.