Ramgopal Rao, V. ; Vasi, J. (1992) Radiation-induced interface-state generation in reoxidized nitrided SiO2 Journal of Applied Physics, 71 (2). 1029_1-1029_3. ISSN 0021-8979
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Official URL: http://link.aip.org/link/japiau/v71/i2/p1029/s1
Related URL: http://dx.doi.org/10.1063/1.350390
Abstract
Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation-induced interface-state generation (ΔDitm) and midgap voltage shifts (ΔVmg). The suppression of ΔDitm observed with heavy nitridation or reoxidation is explained in terms of the trapped-hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Silicon Oxides; Nitridation; MOS Junctions; Interface States; Physical Radiation Effects; Gamma Radiation; Cobalt 60; Oxidation; Space Charge |
| ID Code: | 41579 |
| Deposited On: | 30 May 2011 09:44 |
| Last Modified: | 30 May 2011 09:44 |
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