A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

Abstract

A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (N_it) and oxide charges (N_ot) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of N_it from N_ot is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated N_it and N_ot. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data.