Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors

Dudhe, Ravishankar S. ; Tiwari, S. P. ; Raval, Harshil N. ; Khaderbad, Mrunal A. ; Singh, Rahul ; Sinha, Jasmine ; Yedukondalu, M. ; Ravikanth, M. ; Kumar, Anil ; Ramgopal Rao, V. (2008) Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors Applied Physics Letters, 93 (26). 263306_1-263306_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v93/i26/p2633...

Related URL: http://dx.doi.org/10.1063/1.3049130

Abstract

Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor "on" current (Ion) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Explosives; Field Effect Transistors; Fourier Transform Spectra; Gas Sensors; Infrared Spectra; Organic Compounds; Organic Semiconductors
ID Code:41568
Deposited On:30 May 2011 09:21
Last Modified:30 May 2011 09:21

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