Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal-oxide-semiconductor devices

Patil, Samadhan B. ; Kumbhar, Alka ; Waghmare, Parag ; Ramgopal Rao, V. ; Dusane, R. O. (2001) Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal-oxide-semiconductor devices Thin Solid Films, 395 (1-2). pp. 270-274. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...

Related URL: http://dx.doi.org/10.1016/S0040-6090(01)01281-0

Abstract

Silicon nitride as a gate dielectric can improve the performance of ULSI CMOS devices by decreasing the gate leakage currents. In this paper we report a a-SiN:H gate dielectric fabricated using Cat-CVD at a relatively low substrate temperature of ~250°C, using silane and ammonia as the source gases. The films were deposited at various gas pressures, (NH3/SiH4) flow rate ratios and at different filament temperatures (TF). The deposition parameters, i.e. total gas pressure and gas composition (silane+ammonia) were optimized to deposit insulating and transparent films with high breakdown strength. The structural properties of these films were studied by Fourier transform infrared (FTIR) spectroscopy and ultraviolet-visible (UV-vis) spectroscopy. Films with bandgap as high as 5.5 eV were obtained. The optimized conditions were used to deposit ultrathin films of the order of 8 nm thickness for deep-submicron CMOS technology. Electrical properties such as C-V and I-V measurements were studied on metal-nitride-semiconductor (MNS) capacitor structures. These characterization results on MNS capacitors show breakdown fields of the order of 10 MV cm−1 and good interface properties.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Silicon Nitride; Chemical Vapor Deposition; Dielectric Properties; Metal-oxide-semiconductor Structure
ID Code:41557
Deposited On:30 May 2011 09:00
Last Modified:30 May 2011 09:00

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