Walawalkar, Mrinalini G. ; Kottantharayil, Anil ; Ramgopal Rao, V. (2009) Chemical vapor deposition precursors for high dielectric oxides: zirconium and hafnium oxide Synthesis and Reactivity in Inorganic Metal-Organic and Nano-Metal Chemistry, 39 (6). pp. 331-340. ISSN 1553-3174
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Official URL: http://www.informaworld.com/smpp/content~db=all~co...
Related URL: http://dx.doi.org/10.1080/15533170903094964
Abstract
High dielectric oxides namely ZrO2 and HfO2 have gained a lot of importance as they are candidates in the electronic industry in the form of CMOS technology. A complete review of the literature examples of the precursors employed in the deposition of the thin films of these metal oxides, followed by methodology to design precursors with desirable physicochemical properties have been described in this review article.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Group. |
| Keywords: | CVD Precursors; Hafnia; High Dialectric Oxides; Oxide Precursors; Zirconia |
| ID Code: | 41540 |
| Deposited On: | 30 May 2011 08:22 |
| Last Modified: | 30 May 2011 08:22 |
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