Raval, Harshil N. ; Tiwari, Shree Prakash ; Navan, Ramesh R. ; Ramgopal Rao, V. (2009) Determining ionizing radiation using sensors based on organic semiconducting material Applied Physics Letters, 94 (12). 123304_1-123304_3. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v94/i12/p1233...
Related URL: http://dx.doi.org/10.1063/1.3107266
Abstract
The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Dosimeters; Electrical Conductivity; Organic Field Effect Transistors; Organic Semiconductors; Polymers; Radiation Effects; Resistors |
ID Code: | 41533 |
Deposited On: | 30 May 2011 07:24 |
Last Modified: | 17 May 2016 23:13 |
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