Tiwari, S. P. ; Srinivas, P. ; Shriram, S. ; Kale, Nitin S. ; Mhaisalkar, S. G. ; Ramgopal Rao, V. (2008) Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric Thin Solid Films, 516 (5). pp. 770-772. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...
Related URL: http://dx.doi.org/10.1016/j.tsf.2007.06.048
Abstract
This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10-20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (<90°C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Passivation; Organic Field Effect Transistor (OFET); HWCVD; ON/OFF ratio; Mobility |
| ID Code: | 41528 |
| Deposited On: | 30 May 2011 07:14 |
| Last Modified: | 30 May 2011 07:14 |
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