Rosenbaum, T. F. ; Pepke, S. ; Bhatt, R. N. ; Ramakrishnan, T. V. (1990) Electronic states in a disordered metal: magnetotransport in doped germanium Physical Review B: Condensed Matter and Materials Physics, 42 (17). 11214–11217. ISSN 1098-0121
Full text not available from this repository.
Official URL: http://prb.aps.org/abstract/PRB/v42/i17/p11214_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.42.11214
Abstract
We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H~25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 40801 |
| Deposited On: | 25 May 2011 11:09 |
| Last Modified: | 25 May 2011 11:09 |
Repository Staff Only: item control page
