Jing, T. W. ; Ong, N. P. ; Ramakrishnan, T. V. ; Tarascon, J. M. ; Remschnig, K. (1991) Anomalous enhancement of the electron dephasing rate from magnetoresistance data in BiSrCuO Physical Review Letters, 67 (6). pp. 761-764. ISSN 0031-9007
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Official URL: http://prl.aps.org/abstract/PRL/v67/i6/p761_1
Related URL: http://dx.doi.org/10.1103/PhysRevLett.67.761
Abstract
The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1/Tφ that varies as T−1/3. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1/Tφ vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 40798 |
| Deposited On: | 25 May 2011 11:13 |
| Last Modified: | 25 May 2011 11:13 |
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