Gettered GaP substrates for improved multijunction solar cell devices

Montgomery, K. H. ; Allen, C. R. ; Wildeson, I. H. ; Jeon, J. H. ; Ramdas, A. K. ; Woodall, J. M. (2011) Gettered GaP substrates for improved multijunction solar cell devices Journal of Electronic Materials, 40 (6). pp. 1457-1460. ISSN 0361-5235

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Official URL: http://www.springerlink.com/content/55t0500p342043...

Related URL: http://dx.doi.org/10.1007/s11664-011-1605-1

Abstract

We report on the characterization of gettered p-type GaP substrates for application in high-efficiency multijunction solar cells. A commercial zinc-doped GaP substrate was divided, with one piece soaked in a phosphorus-saturated gallium-aluminum melt at 975° C. Low-temperature continuous-wave photoluminescence indicated a significant decrease in deep-level impurity peaks due to oxygen and zinc-oxygen complexes after gettering in the phosphorus-saturated gallium-aluminum melt. To illustrate what effect this has on minority-carrier diffusion lengths, Au/GaP Schottky solar cells were fabricated on the substrates, and the spectral response of each was examined. A marked increase in response across all wavelengths on the gettered sample indicates an increase in minority-carrier diffusion lengths. To ensure these results were not simply due to an increase in the depletion region width resulting from a change in carrier density, C-V profiling was performed and found only a small change in carrier concentration of the gettered sample.

Item Type:Article
Source:Copyright of this article belongs to The Minerals, Metals & Materials Society.
Keywords:Gettering; GaP; Multijunction Solar Cell; Photoluminescence; Spectral Response; Capacitance-voltage
ID Code:40478
Deposited On:24 May 2011 14:33
Last Modified:24 May 2011 14:34

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