Chandrasekhar, H. R. ; Fisher, P. ; Ramdas, A. K. ; Rodriguez, S. (1972) Deformation potential constants of the ground state of boron acceptors in silicon Physics Letters A, 41 (2). pp. 137-138. ISSN 0375-9601
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037596...
Related URL: http://dx.doi.org/10.1016/0375-9601(72)91083-3
Abstract
The shear deformation potential constants of the ground state of boron acceptors in silicon have been determined from the piezospectroscopy of the 2p' line; they are b' = -(1.61 ± 0.07) eV and d' = -(4.50 ± 0.15) eV.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 40429 |
| Deposited On: | 24 May 2011 14:22 |
| Last Modified: | 24 May 2011 14:22 |
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