Raman probe to estimate surface energies of embedded semiconductor nanostructures

Abstract

Embedded semiconductor nanoclusters (nc-) of GaN, Si and InN were grown using the ion-implantation technique and subsequent annealing. Detailed phonon properties were studied for the identification of the grown phases as well as to estimate the stress developed in these embedded structures. The surface energies of the embedded nanoclusters were calculated in analogy with the stressed spherical nanoclusters and excess pressure in a liquid drop. The estimated surface energies for nc-GaN ~4Nm⁻¹, nc-InN ~2.7 Nm⁻¹ and nc-Si ~1.4 Nm⁻¹ are discussed in the light of possible phase transition in the nanocrystalline systems.