Samarth, N. ; Luo, H. ; Furdyna, J. K. ; Qadri, S. B. ; Lee, Y. R. ; Ramdas, A. K. ; Otsuka, N. (1990) Molecular beam epitaxy of CdSe and the derivative alloys Zn1- xCdxSe and Cd1-xMnxSe Journal of Electronic Materials, 19 (6). pp. 543-547. ISSN 0361-5235
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Official URL: http://www.springerlink.com/content/e582758434g151...
Related URL: http://dx.doi.org/10.1007/BF02651276
Abstract
We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤ x ≤ 1) and Cd1-x MnxSe (0 ≤ x ≤ 0.8) on (100) GaAs. χ -ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible.
Item Type: | Article |
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Source: | Copyright of this article belongs to The Minerals, Metals &Materials Society. |
Keywords: | MBE; II-VI Compounds; XRD; TEM; Superlattices; Modulated Structures |
ID Code: | 40407 |
Deposited On: | 24 May 2011 14:26 |
Last Modified: | 24 May 2011 14:26 |
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