Sharma, R. B. ; Late, D. J. ; Joag, D. S. ; Govindaraj, A. ; Rao, C. N. R. (2006) Field emission properties of boron and nitrogen doped carbon nanotubes Chemical Physics Letters, 428 (1-3). pp. 102-108. ISSN 0009-2614
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00092...
Related URL: http://dx.doi.org/10.1016/j.cplett.2006.06.089
Abstract
Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of 1 μA, the current density (J) was 4 A/cm2 at 368 V/μm for B-doped CNTs and at 320 V/μm for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm2 at 290 V/μm for undoped CNTs. FE currents upto 400 μA drawn from both B- and N-doped CNTs are stable for more than 3 h.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 40108 |
| Deposited On: | 21 May 2011 09:06 |
| Last Modified: | 21 May 2011 09:06 |
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