Parashar, Sachin ; Vijaya Sarathy, K. ; Vanitha, P. V. ; Raju, A. R. ; Rao, C. N. R. (2001) A comparative study of thin films of hole-doped Pr0.6Ca0.4MnO3 and electron-doped Pr0.4Ca0.6MnO3 Journal of Physics and Chemistry of Solids, 62 (8). pp. 1387-1391. ISSN 0022-3697
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00223...
Related URL: http://dx.doi.org/10.1016/S0022-3697(01)00053-1
Abstract
Properties of thin films of hole-doped Pr0.6Ca0.4MnO3 and electron-doped Pr0.4Ca0.6MnO3 are compared. While both are charge-ordered insulators, the hole-doped manganate undergoes an insulator-metal (I-M) transition on the application of magnetic-fields, but the electron-doped manganate does not. Substitution of 3% Cr3+ or Ru4+ in the Mn site has greater effect on the hole-doped manganate. Electrical fields, however, have similar effects on the hole-doped and electron-doped manganates, both exhibiting current-induced I-M transitions. The study not only establishes that the mechanism of the I-M transition brought about by electric and magnetic fields are different, but also suggests that the electronic structures of the hole-doped and electron-doped manganates have basic differences.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Electronic Materials; A. Oxides; B. Vapor Deposition; D. Electrical Conductivity |
| ID Code: | 40105 |
| Deposited On: | 21 May 2011 09:01 |
| Last Modified: | 21 May 2011 09:01 |
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