Hole pairing within an extended Anderson impurity model applicable to the high-Tc cuprates

Sarma, D. D. ; Ramasesha, S. ; Taraphder, A. (1989) Hole pairing within an extended Anderson impurity model applicable to the high-Tc cuprates Physical Review B: Condensed Matter and Materials Physics, 39 (16). pp. 12286-12289. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v39/i16/p12286_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.39.12286

Abstract

We calculate the binding energy of a hole pair within the extended Anderson Hamiltonian for the high-Tc cuprates including a Cu impurity and an oxygen-derived band. The results indicate that stable hole pairs can be formed for intra-atomic and interatomic Coulomb repulsion strengths larger than 6 and 3.5 eV, respectively. It is also shown that the total hybridization strength between the Cu 3d and oxygen p band should be less than 2.5 eV. The hole pairing takes place primarily within the oxygen-derived p band. The range of parameter values for which hole pairing occurs is also consistent with the earlier photoemission results from these cuprates.

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Deposited On:12 May 2011 14:20
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