Vadjikar, R. M. ; Jain, B. ; Gupta, P. K. ; Nandedkar, R. V. ; Bhawalkar, D. D. ; Patni, M. J. ; Srinivasa, R. ; Chandorkar, A. N. (1994) Chemical treatment of photoluminescent porous silicon Materials Science and Engineering: B, 23 (2). L13-L15. ISSN 0921-5107
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/092151...
Related URL: http://dx.doi.org/10.1016/0921-5107(94)90350-6
Abstract
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible region. We report on the effect of chemical treatments such as hydrofluoric acid dip, ammonium fluoride solution treatment and boiling water treatment on the photoluminescence of porous silicon. In view of our results the mechanism of photoluminescence of porous silicon is discussed.
Item Type: | Article |
---|---|
Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 3316 |
Deposited On: | 11 Oct 2010 09:05 |
Last Modified: | 18 May 2011 11:26 |
Repository Staff Only: item control page