Awana, V. P. S. ; Moorthy, V. N. ; Narlikar, Anant Vishnu (1994) Thermoelectric power of Bi2-xPbxCa2Sr2Cu3O10 based on the two-band model Physical Review B: Condensed Matter and Materials Physics, 49 (9). pp. 6385-6387. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v49/i9/p6385_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.49.6385
Abstract
A two-band model has been applied to explain the observed behavior of the thermoelectric power of Bi-2:2:2:3. The model invokes the Cu-O planes, which contribute to the metallic conduction of holes, while Bi-O planes contribute to the semiconductorlike behavior of electrons. The results indicate a good fit to the observed data and are consistent with the recently reported scanning-tunneling-spectroscopy studies of Bi-O layers in Bi cuprates.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 32915 |
| Deposited On: | 19 Mar 2011 06:08 |
| Last Modified: | 19 Mar 2011 06:08 |
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