Patel, Ambalal Ranchhodhbhai ; Mysorewala, Damodaradas V. (1970) Effect of temperature and pressure on the thermal oxidation behaviour of β-Sn films Materials Research Bulletin, 5 (12). pp. 1031-1038. ISSN 0025-5408
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Official URL: http://dx.doi.org/10.1016/0025-5408(70)90052-8
Related URL: http://dx.doi.org/10.1016/0025-5408(70)90052-8
Abstract
Room temperature grown β-Sn films were thermally oxidised for 2 hours at various temperatures up to 200°C both in air and in vacuum. Only above about 130°C is α-SnO oxide formed; below 130°C amorphous oxide growth occurs. No higher oxide growth occurs in air. In vacuum, the growth morphology of α-SnO is different (whisker growth). A surprising result-the growth of a higher oxide at reduced oxygen partial pressure-was noted.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 32846 |
| Deposited On: | 03 May 2011 13:50 |
| Last Modified: | 03 May 2011 13:50 |
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