Bell, L. Douglas ; Narayanamurti, Venkatesh (1998) Ballistic-electron-emission microscopy of semiconductor heterostructures Current Opinion in Solid State & Materials Science, 3 (1). pp. 38-44. ISSN 1359-0286
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S13590...
Related URL: http://dx.doi.org/10.1016/S1359-0286(98)80063-6
Abstract
Ballistic-electron-microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport. Recent applications include band offsets, electron scattering, confined states, interfacial defects, and insulating layers.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 30735 |
| Deposited On: | 27 Dec 2010 08:22 |
| Last Modified: | 06 Mar 2011 12:06 |
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