Vertically integrated optics for ballistic electron emission luminescence: device and microscopy characterizations

Yi, Wei ; Appelbaum, Ian ; Russell, Kasey J. ; Narayanamurti, Venkatesh ; Schalek, Richard ; Hanson, Micah P. ; Gossard, Arthur C. (2006) Vertically integrated optics for ballistic electron emission luminescence: device and microscopy characterizations Journal of Applied Physics, 100 (1). 013105_1-013105_9. ISSN 0021-8979

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Official URL: http://link.aip.org/link/?JAPIAU/100/013105/1

Related URL: http://dx.doi.org/10.1063/1.2208738

Abstract

By integrating a p-i-n photodiode photodetector directly into a ballistic electron emission luminescence (BEEL) heterostructure with GaAs quantum-well active region, we have obtained a photon detection efficiency of more than 10%. This is many orders of magnitude higher than conventional far-field detection scheme with the most sensitive single-photon counters, enabling BEEL microscopy in systems with no optical components. Detailed analysis shows found a parasitic bipolar injection in parallel with the desired optical coupling between the BEEL heterostructure and the integrated photodiode beyond a characteristic collector bias, which may be solved by improved device design or limiting the operating window of the collector bias. Preliminary BEEL microscopy images of a homogeneous GaAs quantum-well luminescent layer show lateral variations of photon emission correlated with the collector current injection level modulated by surface features or interface defects.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:30722
Deposited On:27 Dec 2010 08:24
Last Modified:17 May 2016 13:20

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