Ruzmetov, Dmitry ; Gopalakrishnan, Gokul ; Deng, Jiangdong ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2009) Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions Journal of Applied Physics, 106 (8). 083702_1-083702_5. ISSN 0021-8979
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Official URL: http://link.aip.org/link/?JAPIAU/106/083702/1
Related URL: http://dx.doi.org/10.1063/1.3245338
Abstract
200 nm diameter Au contacts were fabricated by e-beam lithography on sputtered thin film vanadium oxide grown on conducting substrates and current perpendicular to plane electron transport measurements were performed with a conducting tip atomic force microscope. Sharp jumps in electric current were observed in the I-V characteristics of the nano-VO2 junctions and were attributed to the manifestation of the metal-insulator transition. The critical field and dielectric constant were estimated from quantitative analysis of the current-voltage relationship and compared with reported values on micrometer and larger size scale devices. These results are of potential relevance to novel oxide electronics utilizing metal-insulator transitions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 30719 |
| Deposited On: | 27 Dec 2010 08:24 |
| Last Modified: | 05 Mar 2011 12:09 |
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