Yi, W. ; Stollenwerk, A. J. ; Narayanamurti, V. (2000) Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures Surface Science Reports, 64 (5). pp. 169-190. ISSN 0167-5729
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01675...
Related URL: http://dx.doi.org/10.1016/j.surfrep.2009.01.001
Abstract
Ballistic electron emission microscopy (BEEM) and its spectroscopy utilize ballistic transport of hot carriers as a versatile tool to characterize nanometer-scale structural and electronic properties of metallic and semiconducting materials and their interfaces. In this review, recent progress in experimental and theoretical aspects of the BEEM technique are covered. Emphasis is drawn to the development of BEEM in several emerging fields, including spin-sensitive hot-carrier transport through ferromagnetic thin films and multilayers, hot-electron spectroscopy and imaging of organic thin films and molecules, and hot-electron induced electroluminescence in semiconductor heterostructures. A brief discussion on BEEM of cross-sectional semiconductor heterostructures and advanced insulator films is also included.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Ballistic Transport; Tunneling Microscopy; Semiconductor Heterostructures; Spintronics; Electroluminescence; Organic Materials |
ID Code: | 30702 |
Deposited On: | 23 Dec 2010 12:46 |
Last Modified: | 17 May 2016 13:18 |
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