Narayanamurti, V. ; Logan, R. A. ; Chin, M. A. ; Lax, M. (1978) Anisotropic phonon generation in GaAs epilayers and pn junctions Solid-State Electronics, 21 (11-12). pp. 1295-1298. ISSN 0038-1101
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...
Related URL: http://dx.doi.org/10.1016/0038-1101(78)90196-X
Abstract
Phonon generation in n-GaAs epilayers and pn junctions is studied by means of a superconducting bolometer and time of flight techniques. Phonon emission is found to depend markedly on propagation direction, carrier concentration and defect density. Results obtained with n-layers are compared to theoretical estimates of the generation rate due to screened piezoelectric and deformation potential interactions. The data provide a vivid demonstration of theoretical selection rules.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 30701 |
| Deposited On: | 23 Dec 2010 12:46 |
| Last Modified: | 11 Jun 2011 08:22 |
Repository Staff Only: item control page
