Narayanamurti, V. ; Logan, R. A. ; Chin, M. A. (1979) Symmetry of donor-related centers responsible for persistent photoconductivity in AlxGa1-xAs Physical Review Letters, 43 (20). pp. 1536-1539. ISSN 0031-9007
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Official URL: http://prl.aps.org/abstract/PRL/v43/i20/p1536_1
Related URL: http://dx.doi.org/10.1103/PhysRevLett.43.1536
Abstract
We report on the attenuation of ballistic phonons generated in bulk GaAs and propagating through epitaxial layers of AlxGa1-xAs containing up to 1018 Sn or Te donors per cubic centimeter. The latter donors are known to form a complex with an unidentified defect (DX center) whose occupation is changed by photoexcitation. The symmetry of the ionized DX center is shown to be trigonal in the case of Sn and most likely orthorhombic in the case of Te donors.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 30661 |
| Deposited On: | 23 Dec 2010 12:54 |
| Last Modified: | 11 Jun 2011 08:21 |
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