Mani, R. G. ; Narayanamurti, V. ; Klitzing, K. Von ; Smet, J. H. ; Johnson, W. B. ; Umansky, V. (2004) Radiation-induced oscillatory Hall effect in high-mobility GaAs/AlxGa1-xAs devices Physical Review B, 69 (16). 161306_1-161306_4. ISSN 1098-0121
|
PDF
- Publisher Version
598kB |
Official URL: http://prb.aps.org/abstract/PRB/v69/i16/e161306
Related URL: http://dx.doi.org/10.1103/PhysRevB.69.161306
Abstract
We examine the radiation induced modification of the Hall effect in high-mobility GaAs/AlxGa1-xAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance Rxy that correlates with an increase in the diagonal resistance Rxx, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.
Item Type: | Article |
---|---|
Source: | Copyright of this article belongs to American Physical Society. |
ID Code: | 30630 |
Deposited On: | 23 Dec 2010 13:01 |
Last Modified: | 17 May 2016 13:15 |
Repository Staff Only: item control page