Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy

Russell, K. J. ; Narayanamurti, V. ; Appelbaum, Ian ; Hanson, M. P. ; Gossard, A. C. (2006) Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy Physical Review B, 74 (20). 205330_1-205330_5. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v74/i20/e205330

Related URL: http://dx.doi.org/10.1103/PhysRevB.74.205330

Abstract

We present an experimental investigation of the hot-electron mean free path in ErAs thin films grown on GaAs. Using an Al/Al₂O₃/Al tunnel junction as a hot-electron source for ballistic electron emission spectroscopy, we investigate ErAs films of thicknesses ~100-~300 Å. Our results indicate a mean free path of order 100 Å for electrons 1-2 eV above the Fermi level at 80 K.

Item Type:	Article
Source:	Copyright of this article belongs to American Physical Society.
ID Code:	30623
Deposited On:	23 Dec 2010 13:02
Last Modified:	17 May 2016 13:15

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