Electroless deposition of epitaxial Pb_1-xHg_xS films

Abstract

Epitaxial films of Pb_1-xHg_xS (x = 0-0.33) were grown on single-crystal (111) Ge and (111) Si substrates by an electroless deposition process under conditions of controlled dilutions and reaction bath temperatures. Electron microscopy and electron diffraction studies show the predominance of [ 1^-11] and [ 1^-12] orientations in films grown on (111) Ge and (111) Si substrates respectively. The films grew initially as β'-Pb_1-xHg_xS up to a thickness of about 800 Å; beyond this thickness the films were α'-Pb_1-xHg_xS.