Nag, Biswaranjan (1984) Ga0.47In0.53As-the material for high-speed devices Pramana - Journal of Physics, 23 (3). pp. 411-421. ISSN 0304-4289
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Official URL: http://www.ias.ac.in/j_archive/pramana/23/3/411-42...
Related URL: http://dx.doi.org/10.1007/BF02846585
Abstract
Electron transport properties of Ga0.47In0.53As are reviewed. The available physical constants of the material and results on electron mobility in bulk materials, 2deg systems and under hot-electron conditions are presented. Applications of the material in the construction offet's and photo-conductive detectors are briefly discussed.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Ternary Alloy Semiconductor; Electron Mobility; FET- Photodetector |
| ID Code: | 28775 |
| Deposited On: | 15 Dec 2010 11:35 |
| Last Modified: | 17 May 2016 11:48 |
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