Nag, B. R. ; Deb Roy, M. (1984) Submicron electron transport in GaAs at 77 K International Journal of Electronics, 57 (4). pp. 527-533. ISSN 0020-7217
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Related URL: http://dx.doi.org/10.1080/00207218408938934
Abstract
Electron transport in GaAs samples at 77 K for lengths of 0. 1, 0.2 and 0.5 µm is analysed by using a Monte Carlo model. The characteristics are found to be neither collision-dominated nor ballistic. The effects of collisions arc significant even below the threshold fields for intervalley scattering. The results differ from those of the ballistic model by about 10-50%.
Item Type: | Article |
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Source: | Copyright of this article belongs to Taylor and Francis Ltd. |
ID Code: | 28774 |
Deposited On: | 15 Dec 2010 11:35 |
Last Modified: | 08 Jun 2011 07:23 |
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