An investigation of the growth of In_0·53Ga_0·47As layers on InP by liquid phase epitaxy

Abstract

Liquid phase epitaxial growth of lattice-matched In_0·53Ga_0·47As layers on InP substrates is investigated with particular emphasis on the role of interface defects on layer quality. By differential Hall measurements it is established that a bad interface, resulting from the thermal decomposition of InP substrate prior to growth, degrade the electron mobility in all parts of the layer and the effect is most pronounced at regions close to the interface. However layers with much better physical and electrical characteristics are grown following steps to ensure substrate surfaces free from any thermal damage.