Nag, B. R. ; Deb Roy, M. (1985) Position dependence of average electron velocity in a submicrometer GaAs channel Applied Physics A: Materials Science & Processing, 38 (1). pp. 57-58. ISSN 0947-8396
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Official URL: http://www.springerlink.com/content/l32qr3u3v33u47...
Related URL: http://dx.doi.org/10.1007/BF00618727
Abstract
The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 µm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.
Item Type: | Article |
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Source: | Copyright of this article belongs to Springer-Verlag. |
ID Code: | 28757 |
Deposited On: | 15 Dec 2010 11:36 |
Last Modified: | 17 May 2016 11:47 |
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