High-field electron transport in GaAs and Ga(0.47) In (0.53)as rectangular quantum wells

Abstract

Lattice-scattering limited velocity-field characteristics of Gaas and Ga(0.47)In(0.53)As rectangular quantum wells are computed by the Monte Carlo method. The velocity approaches a saturation value at 77 K for a field of about 0.2 kV/cm, while at 300 K it increases with the field as En, with n around 0.8 to 0.9. Velocity run-away is produced for parabolic bands when the velocity is about (2 to 2.5) × 10⁷cm/s in Gaas and (3.3 to 3.8) × 10⁷ cm/s in Ga(0.47)In(0.53)As. The run-away disappears when the effects of band non-parabolicity and inter-subbaiid scattering are included. The velocity in GaInAs is larger by a factor of about 1.1 to 1.8.